Band Gap Engineering

Properties of group IV elements and group III-V compounds:

Atomic structure:
Periodic table (interactive form)
Crystal structure -- the diamond covalent structure:
Interactive diamond and zincblende structures ( GaAs, Si, etc.The unit cell with lists of material property.  The applet shows a 3D view of the until and a 3D view of the covalent bonds.

Details of the tetrahedral covalent bonds in the diamond structure

The "Rosette Stone" of Bandgap Engineering

Energy gap versus lattice constant for the most common III-V ternary alloys.
(Source)

Other Rosette Stones: global and GaAlInN


 
 
MBE (Molecular Beam Epitaxy) -- The Pioneering Exploratory Methodology
(Click to see full size pictures)

 
 
 
Characteristics Direct and Indirect Bandgap Types
(Click to see full size pictures)
GaAs

 
Silicon
To study bandgap variations in more detail go to the applets : GaAs-AlAs compositional variation and Si-Ge compositional variation

 
Characteristic Absorption (k) Index (n) Spectra
(Click to see full size pictures)
Silicon
GaAs
AlAs
InP
Compositional variation of bandgap and index in Alx Ga1-x As
Heterostructures - Issue of Band Offsets
(Click to see full size picture)
See Winston Chan's (University of Iowa) wonderful applet Band Diagrams for Semiconductor Heterostructures (local copy)
Quantum Well (QW) Structure
(Click to see full size picture)
 

http://www.physik.uni-stuttgart.de/ExPhys/4.Phys.Inst./Optoelektronik/papers/icps94/node1.html
http://h50.iue.tuwien.ac.at:8001/vistaa19/node1.html
http://eesun.ece.utep.edu/courses/ee3329/ee3329/Studyguide/ToC/Fundamentals/index.html
http://ncce-src.ceg.uiuc.edu/tutorials/bte_dd/html/bte_dd.html
http://schof.Colorado.EDU/~bart/book/welcome.htm
 
 
 
A veritable "gold mine" of relevant semiconductor properties can be found at:
 
®     Electronic archive:
New Semiconductor Materials. Characteristics and Properties

Introduction
Equivalents of length, area, mass, pressure, energy ...
Physical Properties of Materials
Basic parameters. Band, optical, electrical, mechanical, thermal and other properties.
n, k database
n, k for A3B5, A2B6, Metals, Oxides, Silicides and other materials.
Auger recombination
Theoretical models and calculation of Auger recombination coefficient. 
Calculation of ground energy of electron and hole in
In1-xGaxAsyP1-y

 


This page was prepared and is maintained by R. Victor Jones, jones@deas.harvard.edu
Last updated April 6, 2000