Electronic Devices and Circuits Engineering Sciences 154

Overview/review slide (source)

Thermal excitation:

p_i n_i = n_i²= B T³ exp(-E_G/V_T)

Temperture dependence of the electron concentration and mobility in pure silicon.

Optical excitation:

Photo excitation -- the solid state extension of the photoelectric effect

Picture of vacuum photoelectric experiment
Excellent tutorial on vacuum photoelectric effect
Applet on photoelectric effect

 

Visualization of diffusion, drift and recombination -- For zero bias in the interactive Shockley-Haynes experiment:

 

Overview slide (source)

(source)

See again the Silicon Neighborhood of the periodic table for proper dopants.

Temperature dependence of the conductivity, carrier concentration and mobility of n-type germanium.

Temperture dependence of the resistivity and carrier concentration of p-type silicon.

See also the excellent review by Professor Van Zeghbroeck (University of Colorado) entitled Carrier Transport (local copy)

Visualization of diffusion, drift and recombination -- an interactive Shockley-Haynes experiment