Engineering Sciences 154
Generation in Chemically "Doped" SemiconductorsOverview/review slide (source)Thermal excitation:Optical excitation:
pi ni = ni2= B T3 exp(-EG/VT)
Temperture dependence of the electron concentration and mobility in pure silicon.Photo excitation -- the solid state extension of the photoelectric effectPicture of vacuum photoelectric experiment
Excellent tutorial on vacuum photoelectric effect
Applet on photoelectric effect
Visualization of diffusion, drift and recombination -- For zero bias in the interactive Shockley-Haynes experiment:
Overview slide (source)
Charge Carrier TransportSee again the Silicon Neighborhood of the periodic table for proper dopants.
Temperature dependence of the conductivity, carrier concentration and mobility of n-type germanium.
Temperture dependence of the resistivity and carrier concentration of p-type silicon.
See also the excellent review by Professor Van Zeghbroeck (University of Colorado) entitled Carrier Transport (local copy)
Visualization of diffusion, drift and recombination
-- an interactive Shockley-Haynes experiment