Electronic Devices and Circuits Engineering Sciences 154

          Data

Reference: Silicon in the Ioffe Physico-Technical Institute Electronic Archive

Basic Parameters at 300 K

Crystal structure	Diamond
Group of symmetry	Oh7-Fd3m
Number of atoms in 1 cm3	5 x 1022
Auger recombination coefficient Cn	1.1 x 10-30 cm6 s-1
Auger recombination coefficient Cp	3 x 10-31 cm6 s-1
Debye temperature	640 °K
Density	2.329 g cm-3
Dielectric constant	11.7
Effective electron masses ml	0.98 mo
Effective electron masses mt	0.19 mo
Effective hole masses mh	0.49 mo
Effective hole masses mlp	0.16 mo
Electron affinity	4.05 eV
Lattice constant	5.431 Å
Optical phonon energy	0.063 eV