Repetition Transistor Models

26.04.01


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Inhaltsverzeichnis

Repetition Transistor Models

Structure of MOSFET

Inversion

Ohmic region

Pinch - off

Saturation

Output Characteristics

Channel Length Modulation

Transfer Characteristics and Depletion Mode MOSFET

P-channel MOSFET (PMOS)

IEEE Standard MOS Transistor Circuit Symbols

Summary of MOS Equations

MOS Capacitances - Linear Region

MOS Capacitances - Saturation

MOS Capacitances - Cutoff

Small-Signal Models for Field-Effect Transistors (I)

Small-Signal Models for Field-Effect Transistors

Body Effect in the Four-Terminal MOSFET

High-Frequency MOSFET Small Signal Model

High-Frequency MOSFET Small Signal Model

Physical Structure of Bipolar Junction Transistor (BJT): Simplified Cross Section

Diode Principle

NPN-BJT Principle (I)

NPN-BJT Principle (II)

Total Terminal Currents

Equivalent Circuit

Regions of Operation of the Bipolar Transistor

Simplified Model of BJT Currents

Simplified Model for the npn transistor for the forward-active region

Further simplification of the npn model for the forward-active region

Simplified Model for the npn Transistor in Saturation

Output Characteristics

BJT Transfer Characteristics in the Forward-Active Region

Early Effect

Early Effect (II)

BJT Capacitances

Frequency Dependent Current Gain

Transconductance

Small-Signal Models for Bipolar Junction Transistors (I)

Small-Signal Models for Bipolar Junction Transistors (II)

Summary and Comparison of the Small-Signal Models of the BJT and FET (I)

Summary and Comparison of the Small-Signal Models of the BJT and FET (II)

Example: Common-Collector Amplifier

Autor:FG MES

E-Mail: postmaster@mes.tu-darmstadt.de

Homepage: http://www.microelectronic.e-technik.tu-darmstadt.de