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Engineering Sciences 154 |
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What was the historical context of FET development? The vacuum tube triode:
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For extremely valuable links to tube electronics historical references see Triode Electronics-The Big Tube Data Page (the 1933 RCA Radiotron Manual is particularly interesting)
The Lilienfeld Story:"It was in 1930 when the field-effect principle was first disclosed in U.S. patent by Julius Lilienfeld, a former professor of physics at the University of Leipzig who has recently immigrated to the United States.""On December 16, 1947, the point-contact transistor was demonstrated by Walter H. Brattain and John Bardeen(Shockley 1972 & 1976), with William Shockley as an intensely interested observer. After an additional week of further experimentation and polishing of the demonstration, it was repeated for several key Bell Laboratories managers on December 23, 1947, the date that has come to be taken as the "official" date of reduction to practice. Walter H. Brattain, John Bardeen and William Shockley shared a Nobel prize for the transistor in 1956.
"The invention of the bipolar junction transistor in 1948 was the beginning of semiconductor electronics. This device and semiconductor diodes spawned a revolution electronics. Drastic reduction in size, cost, and power consumption were achieved simultaneously with greatly increased equipment complexity and capability.
"At the same time, in 1948, Shockley and Pearson tried fabricating a rudimentary FET using evaporated layers of germanium on dieletric. However, it was not until Bardeen theoried on the surface state phenomenon and Shockley published his theoretical analysis of the unipolar field-effect transistor ....." (source)
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Animation of a JFET (Source) |
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For more go to our JFET page
Two Schematic Representations of a MOSFET
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(Source)For more go to our MOSFET page